PART |
Description |
Maker |
BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE High Voltage Switching Diode
|
ON Semiconductor
|
150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8 Diode Switching 100V 150A 2-Pin Case B-42 Diode Switching 400V 150A 2-Pin Case B-42 Diode Switching 300V 150A 2-Pin Case B-42 Diode Switching 200V 150A 2-Pin DO-8 Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD91 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes 0.4 A, 325 V, SILICON, SIGNAL DIODE HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
FD700 FD777 |
Diode Switching 30V 0.05A 2-Pin DO-7 Diode Switching 15V 0.05A
|
New Jersey Semiconductor
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
CMUDW6001 |
SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE 75V, 250mA Ultra Low Leakage Switching Diode in the SOT-523W package
|
Central Semiconductor Corp
|